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  1 p-channel 40 v (d-s) 175 c mosfet feat ure s ? halogen-f ree according to iec 61249-2-21 definition ?trenchfet ? power mo sfet ? aec-q101 qualified c ?1 0 0 % r g an d uis teste d ? compliant to rohs directive 2002/95/ec no t es a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material ). c . parametric verification ongo ing. product summa ry v ds (v ) - 40 r ds(on ) ( ? ) a t v gs = - 10 v 0.083 r ds(on ) ( ? ) a t v gs = - 4.5 v 0.110 i d (a ) - 3.6 configuration s ingle s g d p-channel mosfet g t o-236 (sot -23) s d to p view 2 3 1 DTS4501 or der ing information p a ckage sot-23 lead (pb)-free and ha logen-free DTS4501 absolute maximum ratings (t c = 25 c , unless otherwise noted) pa rameter s ymbol limit unit drain-source voltage v ds - 40 v gate - source voltage v gs 20 continuous drain current t c = 25 c i d - 3.6 a t c = 125 c - 2.6 continuous source curr ent (diode conduction) i s - 3. 6 p ulsed drain current a i dm - 18 s i ngle pulse avalanche current l = 0.1 mh i as - 12 si ngle pulse avalanche energy e as 7.2 m j maxi mum power dissipation a t c = 25 c p d 3 w t c = 125 c 1 operating junction and storage temperature range t j , t stg - 55 to + 175 c the r mal resistance ratings p a rameter symb ol limit unit junction-to-ambient pcb mount b r thja 16 6 c/ w junction-to-foot (drain) r thjf 50 www.din-tek.jp dt s 450 1
2 no t es a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to produc tion testing. c. independent of operating temperature. stresses bey o nd those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. spec ifi cations (t c = 25 c , unless otherwise noted) p a rameter s ymbol test condi tion s min . typ. max. unit static d rain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 25 0 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 40 v - - - 1 a v gs = 0 v v ds = - 40 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 40 v, t j = 175 c - - - 150 on-state drain current a i d(on ) v gs = - 10 v v ds ??? - 5 v - 10 - - a drain-source on-state resistance a r ds(on ) v gs = - 10 v i d = - 3 a - 0.071 0.083 ? v gs = - 10 v i d = - 3 a, t j = 125 c - - 0.116 v gs = - 10 v i d = - 3 a, t j = 175 c - - 0.139 v gs = - 4.5 v i d = - 2.4 a - 0.100 0.110 forward transconductance b g fs v ds = - 5 v, i d = - 3 a - 8 - s dyn a mic b input c a pacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 493 620 pf output capacitance c oss -7 6 95 reverse transfer capacitance c rss -5 1 65 total gate charge c q g v gs = - 10 v v ds = - 20 v , i d = - 3 a - 10.5 16 nc gate-source charge c q gs -1 . 8- gate-drain charge c q gd -2 . 6- gate resistance r g f = 1 mhz 5 10 15 ? turn-on delay time c t d(on ) v dd = - 20 v, r l = 6.7 ? i d ? - 3 a, v gen = - 10 v, r g = 1 ? -5 8 ns rise time c t r -1 1 17 turn-off delay time c t d(off) -1 9 29 fall time c t f -8 1 2 s o urce-drain diode ratings and characteristics b pulsed current a i sm --- 18a forward voltage v sd i f = - 1.5 a, v gs = 0 - - 0.8 - 1.2 v www.din-tek.jp dt s 450 1
3 typica l c haracteristics (t a = 25 c, unless otherwise noted) output characteristics tr ans fer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 4 8 12 16 20 0 2 4 6 8 10 i d - d rain current (a) v d s -d r ain-to- s ource voltage (v) v gs = 10 v thru 6 v v gs = 4 v v gs = 5 v 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 i d - d rain current (a) v gs - g ate- to- s ource v oltage (v) t c = 25 c t c = - 5 5 c t c = 125 c 0.0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 r d s (o n ) -on -re s i s tance () i d - d rain current (a) v gs = 4.5 v v gs = 1 0 v 0 4 8 12 16 20 0 2 4 6 8 10 i d - d rain current (a) v gs - g ate- to- s ource v oltage (v) t c = - 5 5 c t c = 125 c t c = 2 5 c 0 3 6 9 12 15 0.0 1.6 3.2 4.8 6.4 8.0 g f s -tr an s conductance ( s ) i d - d rain current (a) t c = 1 2 5 c t c = - 5 5 c t c = 25 c 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 c - c apacitance (pf) v d s -d r ain-to- s ource voltage (v) c i ss c o ss c r ss www.din-tek.jp dt s 450 1
4 typica l c haracteristics (t a = 2 5 c, unless otherwise noted) gate charg e source d rain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 2 4 6 8 10 12 v gs - g ate- to- s ource v oltage (v) q g -t o tal g ate charge (nc) i d = 3 a v d s = 2 0 v 0.001 0.01 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 i s - s ource current (a) v s d - s ource- to- drain voltage (v) t j = 2 5 c t j = 15 0 c -0 . 5 -0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th ) variance (v ) t j -t e mperature ( c) i d = 250 a i d = 5 ma 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 r d s (o n ) -on -re s i s tance (normalized) t j - j unction temperature ( c) i d = 3 a v gs = 4 . 5 v v gs = 1 0 v 0.0 0.2 0.4 0.6 0.8 1.0 024681 0 r d s (o n ) -o n -re s i s tance () v gs - g ate- to- s ource v oltage (v) t j = 150 c t j = 25 c -5 0 -4 8 -46 -44 -42 -40 - 50 - 25 0 25 50 75 100 125 150 175 v d s -d r ain-to- s ource voltage (v) t j - j unction temperature ( c) i d = 1 ma www.din-tek.jp dt s 450 1
5 the r mal ratings (t a = 25 c, unless otherwise noted) saf e operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 0.01 0.1 1 10 100 i d - d rain current (a) v d s -d r ain-to- s ource voltage (v) * v gs > mi nimum v gs at which r d s (on ) i s s pecified 100 m s limited by r d s (on ) * 1 m s i dm limited t c = 2 5 c s ingle pul s e bv d ss limited 10 m s 100 s 1 s 10 s , dc t n e isnart evitceffe dezilamron ecnadepmi lamreht 2 1 0.1 0.01 square w ave pulse duration (s) 10 -4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 166 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 www.din-tek.jp dt s 450 1
6 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n eisnart e v itceffe dezilamro n ecnadepmi lamreht th e rm a l ratings (t a = 25 c, un le ss ot he rwi se no ted) no t e n or mal iz e d therm al transie nt impeda nc e, jun cti on -to-a m bi en t ? the ch ar ac te ris ti cs sh o wn in the two gr aphs - nor malized tra ns i ent th ermal impedance junction- to -ambient ( 25 c) - normalized transi ent thermal impedance junction- to -foot ( 25 c ) are gi ve n for general gui de l in es on ly to e nab le the us er to ge t a ball park indication of part capabil it ie s. the data are ex tra ct ed from sin gle pu lse tr a ns i ent th ermal im pedan ce charac ter is ti cs wh ich are de ve loped fr om empirical m ea s ur em ent s. the la tt er is va lid for the pa rt mounted on printed cir cuit board - fr 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part ca pa b il i t i es can w idely vary depending on ac tu al a ppl ic at i on par am ete rs and operati ng co nd itio ns . www.din-tek.jp dt s 450 1
1 sot-23 ( t o-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.0 35 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0 346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0 748 ref l 0 .40 0.60 0.016 0.024 l 1 0.6 4 ref 0. 025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
 1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index $ssolfdwlrq1rwh www.din-tek.jp
1 disclaimer all prod uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp


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